preliminary d ata sheet d general description ? 600v /1500v anode to cathode voltage ? off l eakage 30% of equivalent mosfet ? high impedan ce mosfet - l ike gate ? vg= +/ - 5v gate drive , pulsed ok ? turn off c urrent: ? 1a & 3a lf - mct s (a,b) ? 10a & 40a lf - mct s (c,d) ? low gate capacitance ~ 380pf ? ultra fast rise t imes ~ 17ns ? sub ~200ns fall t imes ? silicon area reduced to as little as 30% of the silicon of a mosfet wit h equivalent vf ? up to 10x the peak current capability of an equivalent mosfet ? > 40% lower forward vf drop than igbts (1.3 - 1.6v vs. ~2.2v for igbt) ? high current d ensity >> 300 amp peak ? lead f ree rohs compliant to - 252 pkg ? also available as bare die features linear dimensions introduces the revolutionary linear fast mct (lf - mct) . a linear dimensions proprietary mct construction (patents pending) allows lf - mct s for the first time to be used in fast switching applications where mosfets , bipolars & igbts are mor e commonly used. lf - mct s represent the highest current density of any switchi ng pass element. in the past mcts have had switching times in the 800ns+ range and been focused on high current applications. linear dimensions brings lf - mct s to high frequency offline ac/dc and dc/dc switching applications with turn on times of <30ns and turn off times of <200ns (600v devices) . in ac/dc offline applications such as offline flyback converters or switching led drivers, lf - mct s require 1/3 the drive current of th e mosfets typically used. additionally, lf - mct s require 1/3 to 1/8 th the silicon area of a mosfet for a similar voltage drop at rated current saving space and cost . fast lf - mct s can be used as a replacement for igbts where they have a vf that is as much as 40% lower than a typical igbts . although fast lf - mct s must be driven with a +/ - gate voltage, the small current requirement allows the negative voltage to be generated from the output of a typical switching gate drive. additionally, a positive or nega tive pulse will latch them on or off and a continuous voltage is not required. the lnd09 0 are packaged in lead free to - 252 packages or available as bare die . pass ele ment current density density ? crowbar protection circuits ? high - voltage surge suppressors ? uninterruptible power supplies ? capacitor discharge safety switches ? white goods , rice cookers ? ac/dc flyback converters ? dc/dc switching applications ? resonant switchin g ? plasma televisions ? camera strobe lnd 090 a/b/c/d revolutionary lf - mct s replace mosfets, bipo lars & igbts in switching apps with only 1.9 nc gate charge d - pak lf - mct package & symbol applications g a k g a k current density (/ a/ cm2) 1.0 10 100 1000 0 0.5 1.0 1.5 2.0 2.5 forward drop (volts) n-mct p-mct n-igbt darlington n-mosfet temperature: 25c cell size: 35 um comparison of 600v devices with less than 1 us turn-off time modelled forwa rd drop compa rison of mos ga ted power devices
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